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TMS45160P-80DGE

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TMS45160P-80DGE

Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS45160P-80DGE is a 4Mbit Fast Page DRAM with a memory organization of 256K words by 16 bits. This component operates with a maximum access time of 80ns and utilizes CMOS technology. It supports multiple refresh modes including RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH, and SELF REFRESH, with 512 refresh cycles. The I/O type is COMMON, and the component features 3-State output characteristics. Designed for surface mounting, it is housed in a 40-pin TSOP2 package (R-PDSO-G40) with a terminal pitch of 0.8mm. The operating supply voltage ranges from 4.5V to 5.5V. This memory IC finds applications in various sectors, including consumer electronics and industrial automation systems.

Additional Information

Series: TMS45160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G40
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals40
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP40/44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles512
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000350000000000
Supply_Current_Max140.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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