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TMS45160P-70DZ

Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS45160P-70DZ is a 4 Megabit Fast Page DRAM, organized as 256K words by 16 bits. This CMOS component offers a maximum access time of 70ns and operates with a supply voltage range of 4.5V to 5.5V. It supports multiple refresh modes, including RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH, and SELF REFRESH, with 512 refresh cycles. The device features common I/O and 3-state output characteristics, making it suitable for applications requiring high-speed data buffering and storage. Its small outline JEDEC SOJ 40-pin package (R-PDSO-J40) with a 1.27mm terminal pitch is designed for surface mounting. This memory component finds application in general computing, telecommunications infrastructure, and industrial control systems.

Additional Information

Series: TMS45160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width10.1600
TechnologyCMOS
Length26.0350
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J40
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals40
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ40,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles512
Seated_Height_Max3.7600
Self_RefreshYes
Standby_Current_Max0.000350000000000
Supply_Current_Max160.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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