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TMS45160P-10DZ

Fast Page DRAM, 256KX16, 100ns, CMOS, PDSO40

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS45160P-10DZ is a 4Mb Fast Page DRAM with a 256K x 16 organization, offering 4,194,304 bits of storage. This component operates with a 100ns maximum access time and utilizes CMOS technology for efficient performance. It supports various access modes including RAS ONLY, CAS BEFORE RAS, and HIDDEN refreshes, along with a self-refresh capability. The device is housed in a 40-lead SOJ (Small Outline J-Lead) plastic package, suitable for surface mounting applications. Designed for a supply voltage range of 4.5V to 5.5V, it is engineered for reliable operation within an industrial temperature range of 0°C to 70°C. This Fast Page DRAM finds application in embedded systems, consumer electronics, and industrial control equipment requiring cost-effective, high-density memory solutions.

Additional Information

Series: TMS45160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length26.0350
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH
JESD_30_CodeR-PDSO-J40
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals40
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles512
Seated_Height_Max3.7600
Self_RefreshYes
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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