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TMS44C256-12DN

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TMS44C256-12DN

Fast Page DRAM, 256KX4, 120ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS44C256-12DN is a 1-Mbit (256K x 4) Fast Page Mode DRAM utilizing CMOS technology. This component offers a maximum access time of 120ns, supporting asynchronous operation. Key features include RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes. The memory organization is 256K words by 4 bits, providing a total density of 1048576 bits. It operates with a supply voltage of 4.5V to 5.5V and features 3-state outputs. The TMS44C256-12DN is housed in a 20-lead SOJ (Small Outline J-lead) package, suitable for surface mounting. This component is commonly found in consumer electronics, industrial control systems, and telecommunications equipment.

Additional Information

Series: TMS44C256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length16.5100
Width7.4700
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ20/26,.34
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles512
Seated_Height_Max1.8300
Standby_Current_Max0.002000000000000
Supply_Current_Max55.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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