TMS44C256-10DJR
Fast Page DRAM, 256KX4, 100ns, CMOS, PDSO20Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMS44C256-10DJR is a 256K x 4 Fast Page DRAM, offering a 1048576 bit density. This CMOS memory component features a maximum access time of 100ns and operates with a nominal supply voltage of 5V. The memory organization is 256K words by 4 bits, with a common I/O type and 3-state output characteristics. Packaged in a 20-terminal Small Outline J-Lead (SOJ) format (JESD-30 Code R-PDSO-J20), it is designed for surface mounting with a terminal pitch of 1.270 mm. This device supports 512 refresh cycles and operates within a temperature range of 0°C to 70°C. It finds application in various consumer electronics, industrial control systems, and data acquisition equipment requiring high-speed memory solutions.
Additional Information
Series: TMS44C25RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDSO-J20 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 256KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 20 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Equivalence_Code | SOJ20/26,.34 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 512 |
| Standby_Current_Max | 0.002000000000000 |
| Supply_Current_Max | 65.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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