TMS4464-20JL
Page Mode DRAM, 64KX4, 200ns, MOS, CDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4464 series, part number TMS4464-20JL, is a 262,144 bit MOS DRAM organized as 64K words by 4 bits. This page mode dynamic random-access memory offers a maximum access time of 200ns. The TMS4464-20JL features common I/O and 3-state output characteristics, operating with a nominal supply voltage of 5V. It is housed in an 18-lead ceramic dual in-line package (CDIP18) with through-hole mounting. The component supports 256 refresh cycles and is designed for applications requiring reliable memory solutions in industrial and consumer electronics.
Additional Information
Series: TMS4464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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