TMS4464-20FML
Page Mode DRAM, 64KX4, 200ns, NMOS, PQCC18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4464 series page mode DRAM, part number TMS4464-20FML. This NMOS memory component offers a 64K x 4 memory organization, providing 262,144 bits of storage. It features a maximum access time of 200ns and operates asynchronously with a 5V nominal supply. The TMS4464-20FML utilizes page mode operation for enhanced data transfer efficiency and supports RAS ONLY/CAS BEFORE RAS refresh cycles. Packaged in an 18-terminal Plastic J-Bend Chip Carrier (PQCC18), this surface-mount device is suitable for applications requiring high-speed data access in industrial and consumer electronics.
Additional Information
Series: TMS4464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 12.4460 |
| Width | 7.3660 |
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-PQCC-J18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | QCCJ |
| Package_Equivalence_Code | LDCC18,.33X.53 |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 3.5300 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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