TMS4464-12NL
Page Mode DRAM, 64KX4, 120ns, NMOS, PDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4464-12NL is a 64K x 4-bit Page Mode DRAM, offering a total memory density of 262,144 bits. This NMOS technology component features a maximum access time of 120ns and operates with a 5V nominal supply voltage. The memory organization facilitates efficient data retrieval through its page mode access, complemented by RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH capabilities for optimized system performance. Designed with a common I/O type and 3-state outputs, it is housed in an 18-lead PDIP package suitable for through-hole mounting. Applications for this component can be found in industrial control systems and legacy computing platforms.
Additional Information
Series: TMS4464RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.4800 |
| Width | 7.6200 |
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 120.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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