TMS4464-10JL
Page Mode DRAM, 64KX4, 100ns, MOS, CDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMS4464-10JL is a 64K x 4 Page Mode DRAM with a 100ns maximum access time. This MOS technology component utilizes a 262,144 bit memory density. It features Common I/O and 3-State output characteristics, organized into 65,536 words. The TMS4464 series device is housed in an 18-terminal Ceramic Dual In-line Package (CDIP18) with through-hole mounting and a 2.54mm terminal pitch. Operating within a temperature range of 0°C to 70°C, this component is suitable for applications requiring dynamic random-access memory, including industrial control systems and legacy computing platforms. It supports 256 refresh cycles and operates at a nominal supply voltage of 5V.
Additional Information
Series: TMS4464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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