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TMS4464-10FML

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TMS4464-10FML

Page Mode DRAM, 64KX4, 100ns, NMOS, PQCC18

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments TMS4464-10FML is a 262K (64K x 4) NMOS Page Mode DRAM with a maximum access time of 100ns. This component offers flexible refresh operations including RAS-only, CAS-before-RAS, and hidden refresh, supporting 256 refresh cycles. It features a common I/O structure and asynchronous operation, suitable for applications requiring efficient memory access. The TMS4464 series is found in various industrial and consumer electronics systems. This device is housed in an 18-terminal Ceramic Quad Flatpack (CQFP) package, designated as R-PQCC-J18, with a plastic/epoxy package body. It operates from a 5V nominal supply voltage, with a range of 4.5V to 5.5V, and has an operating temperature range of 0°C to 70°C.

Additional Information

Series: TMS4464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length12.4460
Width7.3660
TechnologyNMOS
Access_ModePAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PQCC-J18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization64KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_Equivalence_CodeLDCC18,.33X.53
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Seated_Height_Max3.5300
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD

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