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TMS44410-10DM

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TMS44410-10DM

Fast Page DRAM, 1MX4, 100ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments TMS44410-10DM is a 4Mbit (1M x 4) Fast Page Mode DRAM utilizing CMOS technology. This component offers a maximum access time of 100ns and operates with a supply voltage range of 4.5V to 5.5V. Key features include RAS Only, CAS Before RAS, and Hidden Refresh modes, supporting 1024 refresh cycles. The TMS44410 series memory IC is packaged in a 20-lead SOJ (Small Outline J-lead) package, suitable for surface mounting. This memory solution is commonly employed in consumer electronics, industrial control systems, and networking infrastructure where reliable, high-speed data storage is critical. The device operates asynchronously and features 3-state outputs.

Additional Information

Series: TMS44410RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width8.8900
TechnologyCMOS
Length17.1450
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ20/26,.4
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max65.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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