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TMS44409P-80DGA

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TMS44409P-80DGA

EDO DRAM, 1MX4, 80ns, MOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS44409P-80DGA is a 4M EDO DRAM with a memory organization of 1Mx4 and a maximum access time of 80ns. This MOS technology component supports Fast Page Mode with EDO, offering enhanced performance over standard Fast Page Mode. Key features include RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH, and SELF REFRESH modes, alongside common I/O and 3-state output characteristics. The device operates with a supply voltage range of 4.5V to 5.5V and is housed in a 20-lead PDSO (TSOP2) package with a 1.27mm terminal pitch. This component is suitable for applications in computing, industrial automation, and telecommunications systems requiring high-speed data buffering. Operating temperature ranges from 0°C to 70°C.

Additional Information

Series: TMS44409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width7.6200
TechnologyMOS
Length17.1400
Access_ModeFAST PAGE WITH EDO
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G20
Memory_Density4194304.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSSOP20/26,.36
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000500000000000
Supply_Current_Max80.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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