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TMS44409-70DJ

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TMS44409-70DJ

EDO DRAM, 1MX4, 70ns, MOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments TMS44409-70DJ is a 4Mbit EDO DRAM with a memory organization of 1Mx4. This component offers a maximum access time of 70ns and operates with a supply voltage range of 4.5V to 5.5V, typically 5V. It supports Fast Page mode with EDO extensions and features RAS-only, CAS-before-RAS, and hidden refresh capabilities with 1024 refresh cycles. The TMS44409 series is commonly found in applications such as personal computers, graphics cards, and networking equipment where high-speed memory access is critical. This device is housed in a 20-lead SOJ (Small Outline J-Lead) plastic package with a 1.27mm terminal pitch, suitable for surface mounting. The technology employed is MOS, and it features 3-state output characteristics.

Additional Information

Series: TMS44409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width7.6200
TechnologyMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J20
Memory_Density4194304.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ20/26,.34
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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