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TMS44409-70DGA

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TMS44409-70DGA

EDO DRAM, 1MX4, 70ns, MOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments TMS44409-70DGA is a 4,194,304-bit EDO DRAM organized as 1Mx4 bits. This device features asynchronous operation with an access time of 70ns. It supports Fast Page Mode with EDO capabilities, offering enhanced performance over standard Fast Page Mode. Refresh modes include RAS-only, CAS-before-RAS, and hidden refresh cycles, with a standard 1024 refresh cycles requirement. The component utilizes MOS technology and is housed in a 20-lead Plastic Small Outline Thin Package (PDSO20) with a 1.27mm pitch. Operating voltage ranges from 4.5V to 5.5V nominal 5V, with a maximum operating temperature of 70°C. This memory device is suitable for applications in computing, networking, and industrial control systems.

Additional Information

Series: TMS44409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width7.6200
TechnologyMOS
Length17.1400
Access_ModeFAST PAGE WITH EDO
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G20
Memory_Density4194304.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSSOP20/26,.36
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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