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TMS44409-60DGA

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TMS44409-60DGA

EDO DRAM, 1MX4, 60ns, MOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS44409-60DGA is a 4Mbit EDO DRAM with a memory organization of 1M x 4 bits. This component operates with a 60ns maximum access time and utilizes MOS technology. It features a fast page mode with Extended Data Out (EDO) capability, supporting RAS only, CAS before RAS, and hidden refresh modes. The device is housed in a 20-lead PDSO package (JESD-30 Code R-PDSO-G20) with a standard pitch of 1.27mm. Its common I/O type and asynchronous operating mode make it suitable for applications in consumer electronics and industrial control systems. The operating voltage range is 4.5V to 5.5V, with a nominal supply voltage of 5V. This surface-mount device offers 3-state outputs and has a maximum operating temperature of 70°C.

Additional Information

Series: TMS44409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width7.6200
TechnologyMOS
Length17.1400
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G20
Memory_Density4194304.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSSOP20/26,.36
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max105.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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