TMS44400-60DJR
Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS44400-60DJR is a 4 Megabit (4,194,304 bit) Fast Page Mode DRAM with a memory organization of 1M words by 4 bits. This CMOS device features a maximum access time of 60ns and operates from a single 5V supply. The memory IC type is Fast Page DRAM, supporting efficient sequential data access. The component utilizes a 20-terminal SOJ (Small Outline J-Lead) package, a surface-mount form factor with a J-bend terminal configuration and a 1.270mm terminal pitch. Output characteristics are 3-state, and it supports 1024 refresh cycles. This component is suitable for applications in consumer electronics, industrial control systems, and telecommunications equipment where high-speed memory is required.
Additional Information
Series: TMS44400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 60.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDSO-J20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 1MX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 20 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Equivalence_Code | SOJ20/26,.34 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 1024 |
| Self_Refresh | No |
| Standby_Current_Max | 0.001000000000000 |
| Supply_Current_Max | 95.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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