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TMS44400-10SD

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TMS44400-10SD

Fast Page DRAM, 1MX4, 100ns, CMOS, PZIP20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS44400 series Fast Page DRAM, part number TMS44400-10SD, offers a 4Mbit memory density with a 1M x 4 memory organization. This CMOS component features an access time of 100ns, supporting Fast Page mode operation. Key refresh features include RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH cycles, with 1024 refresh cycles required. The TMS44400-10SD operates asynchronously with a supply voltage range of 4.5V to 5.5V nominal 5V and a typical standby current of 1mA. Its 20-pin Plastic ZIP (PZIP20) package with through-hole mounting is suitable for applications in telecommunications, industrial automation, and consumer electronics. The component's 3-state output characteristics and common I/O type are standard for this generation of memory devices.

Additional Information

Series: TMS44400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width2.8000
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PZIP-T20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeZIP
Package_Equivalence_CodeZIP20,.1
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles1024
Seated_Height_Max10.1600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max65.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch1.270
Terminal_PositionZIG-ZAG

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