TMS44100P-80DGB
Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS44100P-80DGB is a 4M x 1-bit Fast Page DRAM component utilizing CMOS technology. This memory device offers an 80ns maximum access time and operates asynchronously. Key features include RAS ONLY, CAS BEFORE RAS, HIDDEN, and SELF REFRESH modes, with 1024 refresh cycles and integrated self-refresh capability. The component is housed in a 20-terminal PDSO package (JESD_30 Code: R-PDSO-G20) with a 1.27mm terminal pitch. It operates within a temperature range of 0°C to 70°C and requires a supply voltage of 4.5V to 5.5V, typically 5V. This memory IC is suitable for applications in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: TMS44100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 17.1400 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 80.0000000000000000 |
| Additional_Feature | RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
| JESD_30_Code | R-PDSO-G20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2-R |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Refresh_Cycles | 1024 |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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