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TMS44100P-60DGA

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TMS44100P-60DGA

Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS44100P-60DGA is a 4M x 1 bit Fast Page Mode DRAM. This CMOS device offers a maximum access time of 60ns, supporting separate I/O. Key features include RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH, BATTERY BACKUP, and SELF REFRESH modes, along with 1024 refresh cycles. The component operates asynchronously with a supply voltage range of 4.5V to 5.5V. It is housed in a 20-lead PDSO (Plastic Small Outline) package with a 1.27mm pitch. This memory component is suitable for applications in consumer electronics, industrial control, and telecommunications equipment requiring high-speed data access and reliable memory solutions.

Additional Information

Series: TMS44100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PDSO-G20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLSOP
Package_Equivalence_CodeTSSOP20/26,.36
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, LOW PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2700
Self_RefreshYes
Standby_Current_Max0.000500000000000
Supply_Current_Max105.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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