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TMS44100-80DM

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TMS44100-80DM

Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS44100-80DM is a 4M x 1 Fast Page Mode DRAM, offering 4,194,304 bits of storage. This component features an 80ns maximum access time and operates using CMOS technology. The memory organization is 4M words by 1 bit, with an asynchronous operating mode. Supported refresh modes include RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH, requiring 1024 refresh cycles. The device utilizes separate I/O and has a 3-State output characteristic. Packaged in a 20-terminal Small Outline J-Leaded (SOJ) form factor, it is designed for surface mounting with a 1.27mm terminal pitch. Operating voltage ranges from 4.5V to 5.5V with a nominal of 5V. This component is suitable for applications in consumer electronics and industrial automation.

Additional Information

Series: TMS44100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width8.8900
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PDSO-J20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ20/26,.4
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max75.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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