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TMS44100-80DGB

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TMS44100-80DGB

Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS44100-80DGB is a 4M x 1 Fast Page DRAM with an 80ns access time. This CMOS memory component operates with a 5V nominal supply voltage, ranging from 4.5V to 5.5V. It supports various refresh modes including RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH, utilizing 1024 refresh cycles. The device is packaged in a 20-lead PDSO (TSOP2-R) with a terminal pitch of 1.27mm, suitable for surface mounting. Its memory organization and speed make it appropriate for applications in consumer electronics and industrial control systems.

Additional Information

Series: TMS44100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD_30_CodeR-PDSO-G20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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