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TMS44100-70DGB

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TMS44100-70DGB

Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS44100-70DGB is a Fast Page Mode DRAM with a 4M x 1 memory organization, offering a memory density of 4 Megabits. This component features a maximum access time of 70ns and operates using CMOS technology. Key operational features include RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes, supporting 1024 refresh cycles. The device is housed in a 20-lead PDSO (TSOP2-R) package with a 1.27mm terminal pitch, designed for surface mounting. Typical applications for this type of memory component can be found in consumer electronics and industrial control systems. Its operating supply voltage ranges from 4.5V to 5.5V.

Additional Information

Series: TMS44100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD_30_CodeR-PDSO-G20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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