TMS44100-12DM
Fast Page DRAM, 4MX1, 120ns, CMOS, PDSO20Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS44100-12DM is a 4Mbit Fast Page Mode DRAM organized as 4M x 1 bit. This component utilizes CMOS technology and features a maximum access time of 120ns. The TMS4410 series device operates with a nominal supply voltage of 5V and offers separate I/O. It is housed in a 20-lead SOJ (Small Outline J-Lead) package, identified by JESD-30 code R-PDSO-J20, with a terminal pitch of 1.270mm. Key specifications include a standby current of 2mA and a maximum supply current of 65mA. This component is suitable for applications requiring high-density memory, typically found in consumer electronics and industrial control systems. The operating temperature range is 0°C to 70°C.
Additional Information
Series: TMS4410RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDSO-J20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Equivalence_Code | SOJ20/26,.4 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 1024 |
| Self_Refresh | No |
| Standby_Current_Max | 0.002000000000000 |
| Supply_Current_Max | 65.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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