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TMS44100-10DM

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TMS44100-10DM

Fast Page DRAM, 4MX1, 100ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS44100 series DRAM component, part number TMS44100-10DM. This Fast Page Mode DRAM offers a 4M x 1 memory organization, providing 4,194,304 words with a 1-bit data width. It features an asynchronous operating mode with a maximum access time of 100ns. The component utilizes CMOS technology and operates within a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. It supports RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes, with 1024 refresh cycles. The TMS44100-10DM is housed in a 20-terminal SOJ (Small Outline J-lead) package, suitable for surface mounting. This component is commonly employed in computing, telecommunications, and industrial control systems.

Additional Information

Series: TMS44100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width8.8900
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PDSO-J20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ20/26,.4
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.002000000000000
Supply_Current_Max75.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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