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TMS428169P-60DGE

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TMS428169P-60DGE

EDO DRAM, 1MX16, 60ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS428169P-60DGE is a 16,777,216-bit EDO DRAM organized as 1M words by 16 bits. This CMOS memory component features a maximum access time of 60ns and operates with a supply voltage range of 3.0V to 3.6V, with a nominal 3.3V. It supports Fast Page Mode with EDO (Extended Data Out) for enhanced data throughput. Additional operational features include RAS-only, CAS-before-RAS, hidden, and self-refresh modes. The device is housed in a 44-terminal, surface-mount TSOP II package (R-PDSO-G44) with a 0.8mm terminal pitch. This component is suitable for applications requiring high-speed memory in computing, networking, and industrial automation systems.

Additional Information

Series: TMS428169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000200000000000
Supply_Current_Max190.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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