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TMS428169AP-70DGE

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TMS428169AP-70DGE

EDO DRAM, 1MX16, 70ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS428169 series EDO DRAM, part number TMS428169AP-70DGE, offers a 1Mx16 memory organization with a maximum access time of 70ns. This CMOS component operates with a supply voltage range of 3.0V to 3.6V, featuring a nominal 3.3V requirement. The device supports Fast Page Mode with EDO capabilities, along with RAS Only/CAS Before RAS, Hidden, Battery Backup, and Self-Refresh modes. Its 44-terminal TSOP2 package facilitates surface mounting with a terminal pitch of 0.80mm. Applications for this memory IC span industrial automation, telecommunications infrastructure, and consumer electronics requiring high-speed data buffering. The 16,777,216-bit memory is suitable for systems demanding efficient data storage and retrieval.

Additional Information

Series: TMS428169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000150000000000
Supply_Current_Max140.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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