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TMS428169-80DGE

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TMS428169-80DGE

EDO DRAM, 1MX16, 80ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS428169 EDO DRAM, part number TMS428169-80DGE, offers a 1M x 16 memory organization with an 80ns maximum access time. This component utilizes Fast Page Mode with EDO (Extended Data Out) capabilities, enabling high-speed data transfers. It operates asynchronously within a 3.0V to 3.6V supply voltage range and features a CMOS technology. The device supports RAS Only, CAS Before RAS, and Hidden refresh cycles, with 1024 refresh cycles required. Its 44-terminal TSOP2 package (R-PDSO-G44) is designed for surface mounting. This EDO DRAM finds application in computing systems, telecommunications infrastructure, and industrial automation.

Additional Information

Series: TMS428169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width10.1600
TechnologyCMOS
Length20.9500
Access_ModeFAST PAGE WITH EDO
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshNo
Standby_Current_Max0.000500000000000
Supply_Current_Max170.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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