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TMS428169-60DZ

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TMS428169-60DZ

EDO DRAM, 1MX16, 60ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS428169 series EDO DRAM, part number TMS428169-60DZ, offers a 1Mx16 memory organization with a maximum access time of 60ns. This CMOS component utilizes fast page mode with EDO for enhanced performance. It supports RAS-only, CAS-before-RAS, and hidden refresh modes, with 1024 refresh cycles. The device operates asynchronously with a supply voltage range of 3.0V to 3.6V, typically 3.3V. Featuring a 42-lead plastic small outline J-lead (SOJ) package, it is designed for surface mounting. This component finds application in computing, telecommunications, and industrial control systems. The output characteristics are 3-state.

Additional Information

Series: TMS428169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3050
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.000500000000000
Supply_Current_Max190.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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