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TMS427809AP-70DZ

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TMS427809AP-70DZ

EDO DRAM, 2MX8, 70ns, CMOS, PDSO28

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS427809AP-70DZ is a 16 Megabit EDO DRAM with a memory organization of 2M words by 8 bits. This component features a maximum access time of 70ns and operates using CMOS technology with a nominal supply voltage of 3.3V. The device supports self-refresh and has a refresh cycle of 2048. Its output characteristics are 3-state and it utilizes a common I/O type. Packaged in a 28-lead plastic SOJ (Small Outline J-lead) package with a terminal pitch of 1.27mm, this surface-mount component is suitable for applications in computing, telecommunications, and industrial equipment. The TMS427809 series memory IC is designed for efficient data handling in memory-intensive systems.

Additional Information

Series: TMS427809RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max70.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J28
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization2MX8
Memory_Width8
Number_of_Terminals28
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ28,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles2048
Self_RefreshYes
Standby_Current_Max0.000150000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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