TMS427809A-70DZ
EDO DRAM, 2MX8, 70ns, CMOS, PDSO28Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS427809A-70DZ is a 16 Mbit Enhanced DRAM (EDO DRAM) component featuring a 2M x 8 memory organization. This CMOS device offers a maximum access time of 70ns and operates from a nominal 3.3V supply voltage. The TMS427809 series memory is presented in a 28-terminal SOJ (Small Outline J-Lead) package, suitable for surface mounting applications. With a refresh cycle of 2048, this component is designed for use in systems requiring high-speed memory access. Applications for this type of memory include consumer electronics, industrial automation, and telecommunications equipment. The 3-state output characteristic provides flexibility in bus interfacing.
Additional Information
Series: TMS427809RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDSO-J28 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | EDO DRAM |
| Memory_Organization | 2MX8 |
| Memory_Width | 8 |
| Number_of_Terminals | 28 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Equivalence_Code | SOJ28,.44 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 2048 |
| Self_Refresh | No |
| Standby_Current_Max | 0.001000000000000 |
| Supply_Current_Max | 90.000000000000000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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