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TMS427409AP-70DJ

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TMS427409AP-70DJ

EDO DRAM, 4MX4, 70ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments TMS427409AP-70DJ is a 4M x 4 EDO DRAM component offering a 70ns access time. This memory IC features FAST PAGE WITH EDO access mode and supports various features including RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH. The device operates asynchronously with a 3.3V nominal supply voltage (3.0V to 3.6V range) and utilizes CMOS technology. Its organization is 4M words by 4 bits, providing a total memory density of 16 Mbit. The component is housed in a 24-lead PDSO (SOJ) package with J BEND terminals and a 1.27mm pitch, suitable for surface mounting. Applications for this component are found in consumer electronics and industrial control systems requiring high-speed memory solutions. The operating temperature range is 0°C to 70°C.

Additional Information

Series: TMS427409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH
JESD_30_CodeR-PDSO-J24
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles2048
Seated_Height_Max3.7600
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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