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TMS427409AP-60DJ

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TMS427409AP-60DJ

EDO DRAM, 4MX4, 60ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS427409 Series EDO DRAM, part number TMS427409AP-60DJ. This 16 Mbit memory device offers a 4M x 4 organization with a maximum access time of 60ns. It utilizes Fast Page Mode with Extended Data Out (EDO) functionality, supporting asynchronous operation. Key features include RAS Only, CAS Before RAS, Hidden Refresh, Battery Backup, and Self Refresh capabilities. The component operates within a temperature range of 0°C to 70°C and requires a supply voltage between 3.0V and 3.6V, with a nominal voltage of 3.3V. The TMS427409AP-60DJ is fabricated using CMOS technology and is housed in a 24-pin SOJ (Small Outline J-Leaded) plastic package, suitable for surface mounting. This component finds application in various computing and communication systems.

Additional Information

Series: TMS427409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH
JESD_30_CodeR-PDSO-J24
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles2048
Seated_Height_Max3.7600
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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