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TMS427409AP-50DGA

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TMS427409AP-50DGA

EDO DRAM, 4MX4, 50ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS427409AP-50DGA is a 4 Megabit x 4 bit EDO DRAM. This memory component operates asynchronously with a maximum access time of 50ns. The memory organization is 4M words by 4 bits, providing a total density of 16Mbits. It supports FAST PAGE mode with EDO capabilities, offering enhanced performance over standard FPM DRAM. Additional features include RAS-only refresh, CAS-before-RAS refresh, hidden refresh, battery backup, and self-refresh modes. The device is fabricated using CMOS technology and operates from a 3.0V to 3.6V supply, with a nominal voltage of 3.3V. The TMS427409AP-50DGA is housed in a 24-pin TSOP II (Thin Small Outline Package Type II) with a gull wing terminal form, suitable for surface mounting. This component finds application in systems requiring high-speed memory, such as industrial automation and data acquisition equipment.

Additional Information

Series: TMS427409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max50.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH
JESD_30_CodeR-PDSO-G24
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles2048
Seated_Height_Max1.2000
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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