TMS427409A-60DGAR
EDO DRAM, 4MX4, 60ns, CMOS, PDSO24Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS427409A-60DGAR is a 4M x 4 EDO DRAM device. This component features a 60ns access time and operates using CMOS technology. The memory organization is 4 Megabits x 4 bits, yielding a total memory density of 16 Mbit. It is supplied in a 24-lead Plastic Small Outline Thin Package (TSOP24) with a 1.270mm terminal pitch. This device is suitable for applications requiring high-speed data access within the industrial and telecommunications sectors. The operating temperature range is 0°C to 70°C, with a nominal supply voltage of 3.3V. Refresh cycles are handled with 2048 cycles.
Additional Information
Series: TMS427409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 60.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDSO-G24 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | EDO DRAM |
| Memory_Organization | 4MX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 24 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP |
| Package_Equivalence_Code | TSOP24/26,.36 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Refresh_Cycles | 2048 |
| Self_Refresh | No |
| Standby_Current_Max | 0.001000000000000 |
| Supply_Current_Max | 100.000000000000000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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