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TMS427400PDJ-60

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TMS427400PDJ-60

Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS427400PDJ-60 is a 4 Megabit x 4 Fast Page Mode DRAM with an access time of 60ns. This CMOS memory component features a memory organization of 4M words by 4 bits, offering a total memory density of 16M bits. It supports CAS Before RAS refresh and self-refresh capabilities. The device operates asynchronously with a supply voltage range of 3.0V to 3.6V, typically 3.3V, and has an operating temperature range of 0°C to 70°C. The TMS427400PDJ-60 is housed in a 24-lead SOJ (Small Outline J-lead) plastic package (JESD-30 code R-PDSO-J24) with a terminal pitch of 1.27mm. This component is suitable for applications in the telecommunications and industrial sectors.

Additional Information

Series: TMS427400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureCAS BEFORE RAS/SELF REFRESH
JESD_30_CodeR-PDSO-J24
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Seated_Height_Max3.7600
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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