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TMS427400P-60DGB

Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS427400P-60DGB is a 4M x 4 bit Fast Page Mode DRAM. This CMOS device offers a maximum access time of 60ns, enabling high-speed data transfers. The memory organization is 4M words by 4 bits, providing a total density of 16 Mbit. Key operational features include RAS Only, CAS Before RAS, Hidden, and Self Refresh modes, along with 2048 refresh cycles. The component operates with a supply voltage range of 3.0V to 3.6V. It is housed in a 24-lead Small Outline Thin Package (TSOP2-R) with a 1.27mm terminal pitch, suitable for surface mounting. This DRAM is frequently utilized in industrial control systems, telecommunications infrastructure, and consumer electronics requiring efficient memory solutions.

Additional Information

Series: TMS427400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH
JESD_30_CodeR-PDSO-G24
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles2048
Seated_Height_Max1.2000
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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