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TMS426800P-80DZ

Fast Page DRAM, 2MX8, 80ns, CMOS, PDSO28

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS426800 series Fast Page DRAM, part number TMS426800P-80DZ, offers a 2Mx8 memory organization with a maximum access time of 80ns. This CMOS component operates asynchronously with a nominal supply voltage of 3.3V, ranging from 3.0V to 3.6V. It supports various refresh cycles, including 4096 refresh cycles and self-refresh functionality. Key operating modes include RAS ONLY, CAS BEFORE RAS, HIDDEN, and SELF REFRESH, facilitating efficient data access and power management. The device is housed in a 28-lead SOJ (Small Outline J-Lead) plastic package with a terminal pitch of 1.27mm, suitable for surface mounting applications. This component finds application in areas such as telecommunications, industrial control systems, and general-purpose computing.

Additional Information

Series: TMS426800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4150
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH
JESD_30_CodeR-PDSO-J28
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization2MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals28
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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