TMS426800AP-70DZ
Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO32Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS426800AP-70DZ is a CMOS Fast Page DRAM with a memory organization of 2M x 8, delivering a total density of 16,777,216 bits. This component features a maximum access time of 70ns, catering to applications requiring rapid data retrieval. Designed for surface mounting, it utilizes a 32-terminal Small Outline J-Lead (SOJ) package with a terminal pitch of 1.270mm. The device supports self-refresh functionality and operates with a nominal supply voltage of 3.3V. Its 3-state output characteristics are suitable for bus-intensive system designs. This DRAM is commonly found in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: TMS426800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDSO-J32 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 2MX8 |
| Memory_Width | 8 |
| Number_of_Terminals | 32 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Equivalence_Code | SOJ32,.44 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 4096 |
| Self_Refresh | Yes |
| Standby_Current_Max | 0.000150000000000 |
| Supply_Current_Max | 60.000000000000000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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