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TMS426800AP-60DZ

Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO32

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS426800 series Fast Page DRAM, part number TMS426800AP-60DZ. This 2M x 8 device offers a maximum access time of 60ns, utilizing CMOS technology. It features a 32-lead SOJ package with a 1.270mm terminal pitch, designed for surface mounting. The memory organization provides 2,097,152 words with an 8-bit width, totaling 16,777,216 bits of memory. Operation is supported within a temperature range of 0°C to 70°C with a nominal supply voltage of 3.3V. The TMS426800AP-60DZ includes 4096 refresh cycles and supports self-refresh functionality. This component is commonly found in industrial and consumer electronics applications requiring high-speed random access memory.

Additional Information

Series: TMS426800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max60.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J32
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization2MX8
Memory_Width8
Number_of_Terminals32
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ32,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Self_RefreshYes
Standby_Current_Max0.000150000000000
Supply_Current_Max70.000000000000000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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