TMS426800AP-50DZ
Fast Page DRAM, 2MX8, 50ns, CMOS, PDSO32Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMS426800AP-50DZ is a Fast Page Mode DRAM with a memory organization of 2M words by 8 bits, providing a total density of 16 Megabits. This component features a maximum access time of 50ns and operates using CMOS technology. Designed for surface mounting, it is housed in a 32-lead Small Outline J-Leaded (SOJ) package with a 1.27mm terminal pitch. Key features include 4096 refresh cycles, self-refresh capability, and common I/O characteristics with 3-state output. The operating temperature range is from 0°C to 70°C, with a nominal supply voltage of 3.3V. Applications for this memory device span industrial control, consumer electronics, and telecommunications.
Additional Information
Series: TMS426800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 50.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDSO-J32 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 2MX8 |
| Memory_Width | 8 |
| Number_of_Terminals | 32 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Equivalence_Code | SOJ32,.44 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 4096 |
| Self_Refresh | Yes |
| Standby_Current_Max | 0.000150000000000 |
| Supply_Current_Max | 90.000000000000000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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