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TMS426800A-60DZ

Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO32

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS426800A-60DZ is a Fast Page DRAM with a 2M x 8 memory organization, offering a density of 16,777,216 bits. This CMOS component features a maximum access time of 60 ns and operates from a nominal supply voltage of 3.3V. The TMS426800 series device utilizes a 32-pin SOJ (Small Outline J-Lead) package with a terminal pitch of 1.270 mm, suitable for surface mounting. It supports 4096 refresh cycles and has a standby current of 1 mA maximum. This component finds application in various electronic systems, including industrial automation and consumer electronics, where reliable memory performance is critical. The output characteristics are 3-State, and the I/O type is COMMON.

Additional Information

Series: TMS426800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max60.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J32
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization2MX8
Memory_Width8
Number_of_Terminals32
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ32,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max70.000000000000000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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