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TMS426800-70DZ

Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS426800 series Fast Page DRAM, part number TMS426800-70DZ, offers a 16 Mbit (2M x 8) memory organization with a maximum access time of 70ns. This component operates using CMOS technology and supports Fast Page mode for efficient data transfer. Key operational features include RAS Only, CAS Before RAS, and Hidden Refresh for dynamic memory management. The device is housed in a 28-lead SOJ (Small Outline J-Lead) plastic package with J-bend terminals on a 1.27mm pitch, suitable for surface mounting. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal 3.3V. This memory solution is commonly utilized in telecommunications, industrial control, and consumer electronics applications requiring high-speed data buffering.

Additional Information

Series: TMS426800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4150
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD_30_CodeR-PDSO-J28
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization2MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals28
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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