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TMS426409AP-50DGA

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TMS426409AP-50DGA

EDO DRAM, 4MX4, 50ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS426409AP-50DGA is a 16 Megabit EDO DRAM with a memory organization of 4M x 4. This component features a maximum access time of 50ns and operates using CMOS technology. The device supports Fast Page Mode with Extended Data Out (EDO) access, offering enhanced performance over standard Fast Page Mode DRAMs. Additional functionalities include RAS Only, CAS Before RAS, Hidden Refresh, Battery Backup, and Self Refresh modes. The TMS426409 series is typically utilized in applications requiring high-speed data buffering and storage, including computing, networking, and industrial automation systems. This EDO DRAM is supplied in a 24-lead TSOP II (Thin Small Outline Package) package with a gull-wing terminal form. Its operating temperature range is 0°C to 70°C, with a nominal supply voltage of 3.3V.

Additional Information

Series: TMS426409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max50.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH
JESD_30_CodeR-PDSO-G24
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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