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TMS426400PDJ-70

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TMS426400PDJ-70

Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS426400 series Fast Page DRAM offers a 4M x 4 memory organization, providing a total density of 16,777,216 bits. This CMOS component features a maximum access time of 70ns and operates with a supply voltage range of 3.0V to 3.6V, typically nominal at 3.3V. The TMS426400PDJ-70 utilizes a Fast Page mode for efficient data transfer and incorporates CAS Before RAS refresh and self-refresh capabilities. Packaged in a PDSO24 (SOJ) surface-mount format with a J-bend terminal form and 1.27mm pitch, this device is suitable for applications in consumer electronics and industrial control systems where high-speed memory access is critical. The operating temperature range spans from 0°C to 70°C.

Additional Information

Series: TMS426400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureCAS BEFORE RAS/SELF REFRESH
JESD_30_CodeR-PDSO-J24
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Seated_Height_Max3.7600
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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