TMS426400P-10DGB
Fast Page DRAM, 4MX4, 100ns, CMOS, PDSO24Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS426400-10DGB is a 4M x 4 Fast Page DRAM with a maximum access time of 100ns. This CMOS component offers a memory density of 16Mbit and operates asynchronously with a nominal supply voltage of 3.3V. Key features include RAS ONLY, CAS BEFORE RAS, HIDDEN, and SELF REFRESH modes, supporting 4096 refresh cycles. The device is housed in a 24-lead PDSO (TSOP2-R) package with a terminal pitch of 1.27mm, suitable for surface mounting. This DRAM is commonly employed in industrial automation, consumer electronics, and networking infrastructure.
Additional Information
Series: TMS426400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | CMOS |
| Length | 17.1400 |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 100.0000000000000000 |
| Additional_Feature | RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
| JESD_30_Code | R-PDSO-G24 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2-R |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Refresh_Cycles | 4096 |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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