TMS426400DGA-70
Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24Manufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments TMS426400DGA-70 is a 4M x 4 Fast Page Mode DRAM, offering 16,777,216 bits of storage. This CMOS component features a maximum access time of 70 nanoseconds and utilizes the FAST PAGE access mode. Key operational features include CAS BEFORE RAS refresh. The device operates with a supply voltage range of 3.0V to 3.6V, with a nominal of 3.3V. It is housed in a 24-lead PDSO (TSOP2) package with a 1.27mm terminal pitch. Operating temperatures range from 0°C to 70°C. This component is suitable for applications in computing, telecommunications, and industrial equipment.
Additional Information
Series: TMS426400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 17.1400 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 70.0000000000000000 |
| Additional_Feature | CAS BEFORE RAS |
| JESD_30_Code | R-PDSO-G24 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
TMS426400P-10DJ
Fast Page DRAM, 4MX4, 100ns, CMOS, PDSO24
TMS426400-10DJ
Fast Page DRAM, 4MX4, 100ns, CMOS, PDSO24
TMS426400-60DGA
Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24