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TMS426400-80DGB

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TMS426400-80DGB

Fast Page DRAM, 4MX4, 80ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS426400-80DGB is a 4M x 4 Fast Page DRAM operating at 80ns access time. This CMOS component features a 16 Megabit density and supports multiple refresh modes including RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH. Designed for surface mounting, it is housed in a 24-lead PDSO package (JESD-30 Code R-PDSO-G24) with a 1.27mm terminal pitch. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal value of 3.3V. This memory IC is utilized in applications requiring high-speed data storage and retrieval, commonly found in industrial control systems and networking equipment.

Additional Information

Series: TMS426400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width7.6200
TechnologyCMOS
Length17.1400
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD_30_CodeR-PDSO-G24
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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