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TMS426169AP-70DGE

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TMS426169AP-70DGE

EDO DRAM, 1MX16, 70ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS426169 series EDO DRAM, part number TMS426169AP-70DGE, offers a 16Mbit memory density with a 1M x 16 organization. This CMOS component features a maximum access time of 70ns and supports Fast Page mode with EDO capabilities, along with RAS-only/CAS-before-RAS, hidden, battery backup, and self-refresh functions. The device operates asynchronously with a supply voltage range of 3.0V to 3.6V, typically 3.3V. Its 44-terminal TSOP2 package facilitates surface mounting. This DRAM is commonly found in industrial control, consumer electronics, and telecommunications applications requiring high-speed data buffering and storage. The component utilizes 4096 refresh cycles and includes 3-state outputs.

Additional Information

Series: TMS426169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000150000000000
Supply_Current_Max100.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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