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TMS426169A-60DZ

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TMS426169A-60DZ

EDO DRAM, 1MX16, 60ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments TMS426169A-60DZ is a 16Mbit EDO DRAM featuring a 1M x 16 memory organization. This component operates with a maximum access time of 60ns and utilizes CMOS technology. It supports fast page mode with EDO capabilities, along with RAS-only, CAS-before-RAS, and hidden refresh modes. The device offers a 3.3V nominal supply voltage range (3.0V to 3.6V) and is packaged in a 42-lead J-leaded small outline package (SOJ). Refresh cycles are handled with 4096 cycles. This memory solution is suitable for applications in computing, networking, and industrial automation.

Additional Information

Series: TMS426169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width10.1600
TechnologyCMOS
Length27.3050
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max110.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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