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TMS426169A-50DZ

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TMS426169A-50DZ

EDO DRAM, 1MX16, 50ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS426169A-50DZ is a 16Mbit EDO DRAM organized as 1M words by 16 bits. This component features a maximum access time of 50ns and operates with a supply voltage range of 3.0V to 3.6V, with a nominal of 3.3V. The TMS426169A-50DZ supports Fast Page Mode with EDO, along with RAS-only, CAS-before-RAS, and hidden refresh capabilities. It is housed in a 42-lead SOJ (Small Outline J-Lead) plastic package with a terminal pitch of 1.27mm, designed for surface mounting. This memory device is suitable for applications in computing, telecommunications, and industrial control systems that require reliable, high-speed data storage. The operating temperature range is 0°C to 70°C.

Additional Information

Series: TMS426169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3050
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max50.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max130.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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